Job: Senior Research Fellow
School/department: School of Engineering and Sustainable Development
Research group(s): Emerging Technologies Research Centre
Address: De Montfort University, The Gateway, Leicester, LE1 9BH, United Kingdom
T: +44 (0)116 207 8427
Dr. Vershinin has comprehensive knowledge and experience of the semiconductor devices physics and fabrication processes. His particular interest is in the area of power semiconductor devices and integrated circuit. He has designed a number of novels vertical and lateral power devices including planar and trench version Clustered Insulated Gate Bipolar Transistor for low 600V and high 6.5kV applications, MOS devices for smart power ICs including XtreMOS®. His current interest is in using nano size structure in power semiconductor devices.
Emerging Technologies Research Centre (EMTERC)
Click here to view a full listing of Konstantin Vershinin's publications and outputs.
Power Semiconductor devices and ICs
Fabrication of nano structures
Application of nano structures in electronics
Semiconductor modelling and TCAD
PhD in Electrical and Electronic Engineering from De Montfort University, UK
MSc in Applied Physics from Moscow Institute of Physics and Technology (State University) (MIPT), Russia
MSc in Solid State and Semiconductor Physics from MIPT, Russia
Diploma of Engineering in Applied Physics and Mathematics from MIPT, Russia
BSc in Applied Physics and Mathematics from MIPT, Russia
Digital Electronics (ENGD1003)
Communication Systems (ENGD1009)
Applied Electronics (ENGD2001)
Advanced Digital Design (ENGD3001)
Power Electronics (ENGD3025)
Printable Electronics (ENGT5256)
Best Paper award ISPSD 2008
Expertise: Semiconductor devices design, manufacturing process design, layout design.
Previous partners: Zarlink Semiconductors
First supervisor for:
Second Supervisor for:
Al-Sultani, Jasim Farhood Hussein
IEEE Transaction in Plasma Science
IEEE Electron Device Letters
IET Micro and Nano Letters
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