Dr Konstantin Vershinin

Dr. Vershinin has comprehensive knowledge and experience of the semiconductor devices physics and fabrication processes. His particular interest is in the area of power semiconductor devices and integrated circuit. He has designed a number of novels vertical and lateral power devices including planar and trench version Clustered Insulated Gate Bipolar Transistor for low 600V and high 6.5kV applications, MOS devices for smart power ICs including XtreMOS®. His current interest is in using nano size structure in power semiconductor devices.

Emerging Technologies Research Centre (EMTERC)

Click here to view a full listing of Konstantin Vershinin's publications and outputs.

Power Electronics

Power Semiconductor devices and ICs

Semiconductor devices

Semiconductor processing

Fabrication of nano structures

Material analysis

Application of nano structures in electronics

Applied Electronics

VHDL

Embedded Electronics

Power Electronics

Semiconductor modelling and TCAD

Printable Electronics

PhD in Electrical and Electronic Engineering from De Montfort University, UK

MSc in Applied Physics from Moscow Institute of Physics and Technology (State University) (MIPT), Russia

MSc in Solid State and Semiconductor Physics from MIPT, Russia

Diploma of Engineering in Applied Physics and Mathematics from MIPT, Russia

BSc in Applied Physics and Mathematics from MIPT, Russia

Digital Electronics (ENGD1003)

Communication Systems (ENGD1009)

Applied Electronics (ENGD2001)

Advanced Digital Design (ENGD3001)

Power Electronics (ENGD3025)

TCAD (ENGT5126)

Printable Electronics (ENGT5256)

Best Paper award ISPSD 2008

Expertise: Semiconductor devices design, manufacturing process design, layout design.

Previous partners: Zarlink Semiconductors

First supervisor for:

Cacheda Miguel

Second Supervisor for:

Al-Sultani, Jasim Farhood Hussein

Reviewer for:

IEEE Transaction in Plasma Science
IEEE Electron Device Letters
IET Micro and Nano Letters