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Facilities

We have an extensive range of experimental facilities aimed at the production and characterisation of a wide range of materials used within electronics devices. These facilities are grouped within four laboratories of the centre and can be broadly split into fabrication, material characterisation, thin film characterisation and electrical characterisation categories.

Fabrication

We have extensive clean room facilities for back-end processing in EMTERC including:

  • PECVD/RIE system and RF/DC magnetron sputtering
  • Thermal evaporators
  • Dipping and spin coating equipment
  • Langmuir-Blodgett trough for molecular layer depostion

We have optimised processes for deposition of a number of metal organic and inorganic materials and can provide commercial-quality materials deposited onto a substrate of your choice. Examples of the material we can deposit include:

  • Metals - Al, Ni, Au, Ag, W, Mo, Cr, Ti etc.
  • Semiconductors - Silicon Nitride (SiN), Amorphous Silicon (A-Si;H), Zinc Oxide
  • Conducting ITO

Materials Characterisation

We can analyse morphology, as well as electrical, properties of the surface using the following equipment located within EMTERC:

  • Park XE 100 Atomic Force Microscope / Scanning Probe Microscope (AFM/SPM)
  • KLA Tencor Alphastep 200 Profilometer

The AFM/SPM is a high accuracy instrument and technique that can fulfil the needs of nanoscale metrology of small samples in data storage, semiconductors, nanoscience, materials science and polymers. It offers seven different modes supported by experience professional staff and provides a comprehensive suite of analytical techniques:

  • Contact Atomic Force Microscopy (AFM)
  • Scanning Capacitance Microscopy (SCM)
  • Conductive AFM (I-AFM)
  • Scanning Tunnelling Microscopy (STM)
  • Magnetic Force Microscopy (MFM)
  • Electric Force Microscopy (EFM)
  • True non-contact Atomic Force Microscopy (NC-AFM)

The profilometer is a non-destructive, easy-to-use device for step measurement. A diamond-tipped stylus is in direct contact and is scanned across the surface giving robust step-height measurement with a resolution of ±5Å and accurate surface profiles below 200Å and up to 160 µm.

Thin Film Characterisation

Measurement of the optical constants of bare substrates such as silicon, gallium arsenide or gallium arsenide. Thickness and refractive index measurements of single and double-layer transparent films such as nitrides over oxides.

These parameters can be measured using the following equipment located within EMTERC:

  • Ellipsometer - Rudolph Auto ELIII
  • Scanning Electron Microscope (SEM) - LEO SEM 430

Electrical Characterisation

Current-Voltage measurements of wafer level, packaged devices, thin films. Capacitance-Voltage measurements of thin films, eg analysis of novel dielectric materials using testing facilities located in EMTERC: 

  • 8 inch Karl Suss - femto ampere accuracy
  • 8 inch high temperature measurement up to 450ºC
  • 4 inch wafer level switching system up to 150ºC
  • Various HP/Agilent, Keithley characterisation including
    • voltage and current sources
    • LCR Bridge and switching matrix
    • 4 channel 600 MHz LeCroy Oscilloscope with current probe

Download the EMTERC facilities information sheet.|

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